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 CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 1/4
BTD2097AI3
Features
* Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A * Excellent current gain characteristics * Complementary to BTB1412AI3
Symbol
BTD2097AI3
Outline
TO-251
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd@ TA=25 Pd@ TC=25 Tj Tstg Limits 50 20 6 5 10 1 10 150 -55~+150 Unit V V V *1 *2 A W C C
Note : *1. Single Pulse , Pw380s,Duty2%. *2. When mounted on a 40*40*0.7mm ceramic board.
BTD2097AI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 50 20 6 120 Typ. 0.35 150 35 Max. 0.5 0.5 1 820 Unit V V V A A V MHz pF
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=40V, IE=0 VEB=5V,IC=0 IC=4A, IB=0.1A VCE=2V, IC=0.5A VCE=6V, IC=50mA, f=100MHz VCB=20V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range Q 120~270 R 180~390 S 270~560 T 390~820
BTD2097AI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000 HFE@VCE=2V Saturation Voltage-(mV) Current Gain---HFE 100 1000
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
VCESAT@IC=20IB
10
100 1 10 100 1000 10000 Collector Current--- IC(mA)
1 0.1 1 10 100 1000 10000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current 1000 Saturation Voltage-(mV) VCE(SAT)@IB=40IB Saturation Voltage-(mV) 100 10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=20IB
1000
10
1 1 10 100 1000 10000 Collector Current---IC(mA)
100 1 10 100 1000 10000 Collector Current---IC(mA)
Power Derating Curve 1.2 Power Dissipation---PD(W) Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA()
BTD2097AI3
Power Derating Curve 12 10 8 6 4 2 0 0 50 100 150 200
Case Temperature---TC()
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 4/4
A
B
C D
Marking:
D2097
F 3 E K 2 1
G
I H
Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3
J
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2097AI3
CYStek Product Specification


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